Integrated 2D multi-fin field-effect transistors
Mengshi Yu, Congwei Tan, Yuling Yin, Junchuan Tang, Xiaoyin Gao, Hongtao Liu, Feng Ding, Hailin Peng
Abstract
Abstract Vertical semiconducting fins integrated with high- κ oxide dielectrics have been at the centre of the key device architecture that has promoted advanced transistor scaling during the last decades. Single-fin channels based on two-dimensional (2D) semiconductors are expected to offer unique advantages in achieving sub-1 nm fin-width and atomically flat interfaces, resulting in superior performance and potentially high-density integration. However, multi-fin structures integrated with high- κ dielectrics are commonly required to achieve higher electrical performance and integration density. Here we report a ledge-guided epitaxy strategy for growing high-density, mono-oriented 2D Bi 2 O 2 Se fin arrays that can be used to fabricate integrated 2D multi-fin field-effect transistors. Aligned substrate steps enabled precise control of both nucleation sites and orientation of 2D fin arrays. Multi-channel 2D fin field-effect transistors based on epitaxially integrated 2D Bi 2 O 2 Se/Bi 2 SeO 5 fin-oxide heterostructures were fabricated, exhibiting an on/off current ratio greater than 10 6 , high on-state current, low off-state current, and high durability. 2D multi-fin channel arrays integrated with high- κ oxide dielectrics offer a strategy to improve the device performance and integration density in ultrascaled 2D electronics.