Critical Role of Electrical Resistivity in Magnetoionics
Julius de Rojas, Joaquín Salguero, Alberto Quintana, A. F. Lopeandía, Maciej Oskar Liedke, Maik Butterling, Ahmed G. Attallah, Eric Hirschman, A. Wagner, Llibertat Abad, J. L. Costa‐Krämer, Jordi Sort, Enric Menéndez
Abstract
The utility of electrical resistivity as an indicator of magnetoionic performance in stoichiometrically and structurally similar thin-film systems is demonstrated. A series of highly nanocrystalline cobalt nitride ($\mathrm{Co}\text{\ensuremath{-}}\mathrm{N}$) thin films (85 nm thick) with a broad range of electrical properties exhibit markedly different magnetoionic behaviors. Semiconducting, near stoichiometric $\mathrm{Co}\mathrm{N}$ films show the best performance, better than their metallic and insulating counterparts. Resistivity reflects the interplay between atomic bonding, carrier localization, and structural defects, and in turn determines the strength and distribution of applied electric fields inside the actuated films. This fact, generally overlooked, reveals that resistivity can be used to quickly evaluate the potential of a system to exhibit optimal magnetoionic effects, while also opening interesting challenges.