Atomic-level defect modulation and characterization methods in 2D materials
Odongo Francis Ngome Okello, Dong‐Hwan Yang, Yuseong Chu, Sejung Yang, Si‐Young Choi
Abstract
Two-dimensional (2D) materials are attracting increasing research interest owing to their distinct tunable physical properties. Moreover, the ubiquitous defects in 2D materials offer an opportunity to tailor their electronic properties. Recently, atomic-level structural modification methods for 2D materials have been developed, further triggering the need for the precise control of defects. Following the ground-breaking advancements in the atomic-scale characterization of defects in 2D materials, valuable information on defect-driven electronic properties has been published. It is therefore important to present a review work on the recent research developments on atomic-level defect control and characterization of 2D materials. This Perspective highlights the type and role of atomic defects in 2D materials, as well as some current technologies for engineering such defects. In addition, we emphasize on atomic-level characterization methods with a focus on aberration-corrected transmission electron microscopy and deep learning as a powerful method for characterizing defects in 2D materials. Based on the two characterization techniques, we present the experimental results of laser-induced structurally modified MoTe2 and transition metal decorated h-BN. We believe that this work will provide fundamental knowledge for engineering and characterizing defects in 2D materials for the design of application-specific electronic devices.