First-principles study of strain effect on the thermoelectric properties of LaP and LaAs
Chia-Min Lin, Wei-Chih Chen, Cheng-Chien Chen
Abstract
, LaP at a temperature of 1200 K can achieve a figure of merit ZT value >2, which is enhanced by 90% compared to the unstrained value. With carrier doping and strain engineering, lanthanum monopnictides thereby could be promising high-temperature thermoelectric materials.
Topics & Concepts
Thermoelectric effectMaterials scienceDensity functional theoryDopingIsotropyFigure of meritCondensed matter physicsLanthanumThermoelectric materialsStrain (injury)OptoelectronicsTensile strainElectronic structureSeebeck coefficientStrain engineeringEngineering physicsCharge-carrier densityUltimate tensile strengthComposite materialElectrical resistivity and conductivityHybrid functionalElectronic engineeringAdvanced Thermoelectric Materials and DevicesTopological Materials and PhenomenaRare-earth and actinide compounds