Identification of dislocation responsible for leakage current in halide vapor phase epitaxial (001) β-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diodes investigated via ultrahigh-sensitive emission microscopy and synchrotron X-ray topography
Sayleap Sdoeung, Kohei Sasaki, Akito Kuramata, Makoto Kasu
Abstract
Abstract Dislocation responsible for leakage current in a halide vapor phase epitaxial (HVPE) (001) β -Ga 2 O 3 Schottky barrier diode (SBD) was explored via ultrahigh-sensitive emission microscopy, synchrotron X-ray topography, and scanning transmission electron microscopy (STEM). Light emission due to the reverse leakage current was observed at the dislocation position with a leakage current of −0.98 μ A at −100 V. Moreover, the dislocation is visible for the g vectors of 605 and 225; however, it is invisible for <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mover accent="true"> <mml:mrow> <mml:mn>2</mml:mn> </mml:mrow> <mml:mo>¯</mml:mo> </mml:mover> <mml:mn>24</mml:mn> </mml:math> and <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mover accent="true"> <mml:mrow> <mml:mn>10</mml:mn> </mml:mrow> <mml:mo>¯</mml:mo> </mml:mover> <mml:mn>05</mml:mn> </mml:math> . The b was determined to be <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mi mathvariant="normal">⫽</mml:mi> </mml:math> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mo stretchy="false">〈</mml:mo> <mml:mn>1</mml:mn> <mml:mover accent="true"> <mml:mrow> <mml:mn>3</mml:mn> </mml:mrow> <mml:mo>¯</mml:mo> </mml:mover> <mml:mn>2</mml:mn> <mml:mo stretchy="false">〉</mml:mo> </mml:math> from the g · b invisible criteria. This dislocation was determined mixed-type.