Room-temperature van der Waals magnetoresistive memories with data writing by orbital current in the Weyl semimetal <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>TaIrT</mml:mi><mml:msub><mml:mi mathvariant="normal">e</mml:mi><mml:mn>4</mml:mn></mml:msub></mml:mrow></mml:math>
Dong Li, Xingyu Liu, Zhen-Cun Pan, An-Qi Wang, Jiantian Zhang, Peng Yu, Zhi‐Min Liao
Abstract
Current-induced out of plane magnetization has been utilized for field-free switching of ferromagnets with perpendicular magnetic anisotropy. Identifying systems capable of energy-efficiently converting charge currents into out of plane orbit- or spin-polarized currents is crucial for advancing magnetic memory technologies. Here we introduce the Berry curvature dipole as a key evaluation factor, directly measurable through nonlinear Hall effects. In the Weyl semimetal $\mathrm{TaIrT}{\mathrm{e}}_{4}$ used in our experiments, applying a current parallel to the Berry curvature dipole results in out of plane orbital magnetization, which governs the field-free perpendicular magnetization switching in $\mathrm{TaIrT}{\mathrm{e}}_{4}$/$\mathrm{F}{\mathrm{e}}_{3}\mathrm{GaT}{\mathrm{e}}_{2}$ heterostructures. Notably, all-electric control of van der Waals magnetoresistive memory at room temperature has been achieved with a low critical current density $\ensuremath{\sim}2\ifmmode\times\else\texttimes\fi{}{10}^{6}\phantom{\rule{4pt}{0ex}}\mathrm{A}/\mathrm{c}{\mathrm{m}}^{2}$ for data writing. Our findings reveal the connection between nonlinear Hall effects and field-free magnetization switching, highlighting the potential of the Berry curvature dipole in advancing orbitronics.