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Analysis on electrical parameters including temperature and interface trap charges in gate overlap Ge source step shape double gate TFET

Rajesh Saha, Rupam Goswami, Deepak Kumar Panda

2022Microelectronics Journal26 citationsDOI

Topics & Concepts

Materials scienceLinearityQuantum tunnellingIonOptoelectronicsTrap (plumbing)Degradation (telecommunications)Analytical Chemistry (journal)ChemistryElectrical engineeringPhysicsEngineeringOrganic chemistryChromatographyMeteorologyAdvancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devicesNanowire Synthesis and Applications
Analysis on electrical parameters including temperature and interface trap charges in gate overlap Ge source step shape double gate TFET | Litcius