Litcius/Paper detail

Band gap engineering of 2H-MX2 (M = Mo; X  = S, Se, Te) monolayers using strain effect

Anisha, Ramesh Kumar, Sunita Srivastava

2021Materials Today Proceedings13 citationsDOI

Topics & Concepts

MonolayerBand gapMaterials scienceStrain engineeringDirect and indirect band gapsStrain (injury)Density functional theoryElectronic band structureUltimate tensile strengthHeterojunctionCondensed matter physicsTensile strainNanotechnologyOptoelectronicsComposite materialComputational chemistryChemistryInternal medicinePhysicsMedicineSilicon2D Materials and ApplicationsMXene and MAX Phase MaterialsGraphene research and applications