Switching Transient Analysis and Characterization of an E-Mode B-Doped GaN-Capped AlGaN DH-HEMT with a Freewheeling Schottky Barrier Diode (SBD)
Baskaran Subramanian, A. Mohanbabu, Saminathan Veerappan, P. Murugapandiyan, Mohammed Wasim, Saravana Kumar Radhakrishnan, Praveen Pechimuthu, Yogesh Kumar Verma, Subash Navaneethan Vivekanandhan, E. Raju
Topics & Concepts
Materials scienceOptoelectronicsHigh-electron-mobility transistorSchottky barrierSchottky diodeOhmic contactGallium nitrideDopingWide-bandgap semiconductorDiodeTransistorBand gapHeterojunctionLayer (electronics)Electrical engineeringVoltageNanotechnologyEngineeringGaN-based semiconductor devices and materialsGa2O3 and related materialsSilicon Carbide Semiconductor Technologies