A Double-Sided Cooled SiC MOSFET Power Module for EV Inverters
Riya Paul, Rayna Alizadeh, Xiaoling Li, Hao Chen, Yuyang Wang, H. Alan Mantooth
Abstract
Double-sided cooled power module structures enable high power-density for motor drive inverters ideal for electric vehicles (EVs). This work presents a double-sided cooled power module using fast-switching 1200 V silicon carbide MOSFET devices in a half-bridge topology, with heterogeneous integration of gate control circuitry and condition monitoring. This paper describes the module's novel design and a top-down approach to it driven by a prototype inverter for EVs. Highlighted are the specific implementations of the module's key enabling technologies: 1. vertical device-top interconnects in the form of truncated rectangular pyramidal blocks made of copper, enabling maximum heat dissipation; 2. a low temperature co-fired ceramic interposer for high mechanical strength and improved electrical isolation; 3. built-in gate driver boards; 4. embedded temperature sensors. This paper also details the module's unique fabrication process, highlighting its good yield and ease of fabrication. Finally, the prototype module is validated using double-pulse tests in a clamped inductive load at full load current and 800 V DC link voltage