Enhanced valley splitting in Si layers with oscillatory Ge concentration
Yi Feng, Robert Joynt
Abstract
The valley degeneracy in Si qubit devices presents problems for their use in quantum information processing. It is possible to lift this degeneracy by using the wiggle well architecture, in which an oscillatory Ge concentration couples the valleys. This paper presents the basic theory of this phenomenon together with model calculations using the empirical pseudopotential theory to obtain the overall magnitude of this effect and its dependence on the wavelength of the concentration oscillations. We derive an important selection rule which can limit the effectiveness of the wiggle well in certain circumstances.
Topics & Concepts
Degeneracy (biology)PseudopotentialLift (data mining)Limit (mathematics)Statistical physicsQubitWavelengthCondensed matter physicsQuantumPhysicsComputational physicsQuantum mechanicsMathematicsComputer scienceMathematical analysisBioinformaticsBiologyData miningQuantum and electron transport phenomenaSemiconductor Quantum Structures and DevicesAdvancements in Semiconductor Devices and Circuit Design