3 kV fully vertical <i>β</i>-Ga2O3 junction termination extension Schottky barrier diode with sputtered p-GaN
Qingyuan Chang, Bin Hou, Ling Yang, Mao Jia, Youjun Zhu, Mei Wu, Meng Zhang, Qing Zhu, Hao Lu, Jiarui Xu, Chunzhou Shi, Jiale Du, Qian Yu, Mengdi Li, Xu Zou, Haolun Sun, Xiaohua Ma, Yue Hao
Abstract
In this work, we present the fabrication of a fully vertical β-Ga2O3 Schottky barrier diode with junction termination extension (JTE-SBD) utilizing a p-GaN layer produced by sputtering, offering a solution to the absence of p-Ga2O3 materials. The p-GaN/n-Ga2O3 JTE-SBD demonstrates a turn-on voltage (Von) of 0.8 V, a specific on-resistance (Ron,sp) of 6.15 mΩ·cm2, an ideality factor (n) of 1.24, a breakdown voltage of 3 kV, and a Baliga's Figure of Merit of 1.46 GW/cm2. The current–voltage–temperature (I–V–T) testing has confirmed a transition in the dominant leakage mechanisms from the Poole–Frenkel mechanism to variable-range hopping.