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Properties of the structural defects during SiC–crystal–induced crystallization on the solid–liquid interface

Yue Gao, Wanjun Yan, Tinghong Gao, Qian Chen, Wensheng Yang, Quan Xie, Zean Tian, Yongchao Liang, Jun Luo, Lianxin Li

2020Materials Science in Semiconductor Processing16 citationsDOI

Topics & Concepts

Materials scienceCrystallizationCrystal (programming language)CrystallographyVacancy defectChemical physicsCrystal growthCrystallographic defectSemiconductorCondensed matter physicsMolecular physicsOptoelectronicsChemical engineeringPhysicsComputer scienceEngineeringProgramming languageChemistrySilicon Carbide Semiconductor TechnologiesSilicon and Solar Cell TechnologiesThin-Film Transistor Technologies
Properties of the structural defects during SiC–crystal–induced crystallization on the solid–liquid interface | Litcius