A 2.2kV Organic Semiconductor- Based Lateral Power Device
Jun Zhang, Jiayi Zhou, Yuhao Wang, Man Li, Ling Du, Jing Chen, Maolin Zhang, Jiafei Yao, Guobin Zhang, Huabin Sun, Yong Xu, Song Bai, Yufeng Guo
Abstract
The application of organic field-effect transistors (OFETs) in the power device realm has not been explored yet. To achieve a high breakdown voltage, a novel lateral drift region OFET(LDR-OFET) is proposed in this letter. By employing the diketopyrrolopyrrole-based polymer(DPPT-TT) and Poly (methyl methacrylate) (PMMA) to form semiconductor and insulator layers respectively, the fabricated LDR-OFET, despite the simple process and low cost, exhibits an excellent off-state breakdown capability while maintaining a considerable on-state performance. With a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$20~\mu \text{m}$ </tex-math></inline-formula> length of the drift region, the LDR-OFET realizes 2200V breakdown voltage on a spin-coated 50nm thick semiconductor layer. The average electric field of the proposed device reaches 1.18MV/cm before an avalanche-like breakdown occurs. The physical nature of the breakdown mechanism is explored using the 1-D PIN equivalent structure and avalanche breakdown theory. The correctness and effectiveness of the proposed LDR-OFET and breakdown analysis are well demonstrated and validated by experimental results. The LDR-OFETs are expected to fill the blank of organic power devices and be the core component of future organic power integrated circuits.