Improved ferroelectric characteristics of ALD lanthanum-doped hafnium oxide thin film by controlling post-cooling time
Bon‐Cheol Ku, Yooncheol Shin, Young‐Jun Lee, Taeheun Kim, Changhwan Choi
Topics & Concepts
LanthanumMaterials scienceDopingFerroelectricityHafniumOptoelectronicsThin filmOxideLanthanum oxideNanotechnologyInorganic chemistryMetallurgyDielectricChemistryZirconiumFerroelectric and Negative Capacitance DevicesMXene and MAX Phase MaterialsSemiconductor materials and devices