Thin film encapsulation for quantum dot light-emitting diodes using a-SiN<sub><i>x</i></sub>:H/SiO<sub><i>x</i></sub>N<sub><i>y</i></sub>/hybrid SiO<sub><i>x</i></sub> barriers
Keun Yong Lim, Hong Hee Kim, Ji Hyun Noh, So Hyun Tak, Jae-Woong Yu, Won Kook Choi
Abstract
is estimated to be approximately 9804 h, which is comparable to that of the 12 112 h for glass lid-encapsulated QD-LEDs. This result demonstrates that TFE with the ASH films has the potential to overcome the conventional drawbacks of glass lid encapsulation.
Topics & Concepts
Quantum dotEncapsulation (networking)Materials scienceDiodeOptoelectronicsComputer scienceComputer networkSilicon Nanostructures and PhotoluminescenceThin-Film Transistor TechnologiesSemiconductor materials and devices