Effects of switching layer morphology on resistive switching behavior: A case study of electrochemically synthesized mixed-phase copper oxide memristive devices
Somnath S. Kundale, Akhilesh P. Patil, Snehal L. Patil, Prashant Patil, Rajanish K. Kamat, Deok‐kee Kim, Tae Geun Kim, Tukaram D. Dongale
Topics & Concepts
Materials scienceNeuromorphic engineeringOptoelectronicsElectrodeLayer (electronics)MemristorResistive random-access memoryNanotechnologyNanowireNon-volatile memoryThin filmElectronic engineeringComputer scienceArtificial neural networkMachine learningEngineeringChemistryPhysical chemistryAdvanced Memory and Neural ComputingTransition Metal Oxide NanomaterialsNeural dynamics and brain function