Single-Event Latchup in a 7-nm Bulk FinFET Technology
Dennis R. Ball, C. B. Sheets, Lyuan Xu, Jingchen Cao, Shi-Jie Wen, Rita Fung, Carlo Cazzaniga, J. S. Kauppila, L. W. Massengill, B. L. Bhuva
Abstract
Terrestrial neutron and alpha particle irradiation data for a 7-nm bulk FinFET technology reveal the persisting reliability threat single-event latchup (SEL) poses to advanced technology nodes. SEL is characterized over a wide range of supply voltages and temperatures for this technology node. SEL data is analyzed to determine the holding voltage ( V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">HOLD</sub> ) required to sustain SEL, which can be as low as 0.85 V at elevated temperatures. Such low SEL holding voltage within 100 mV of nominal supply voltage poses a major reliability threat.