Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe3GaTe2 with highly spin-polarized Fermi surfaces
Xinlu Li, Meng Zhu, Yaoyuan Wang, Fanxing Zheng, Jianting Dong, Ye Zhou, Long You, Jia Zhang
Abstract
Recently, van der Waals (vdW) magnetic heterostructures have received increasing research attention in spintronics. However, the lack of room-temperature magnetic order of vdW materials has largely impeded its development in practical spintronic devices. Inspired by the lately discovered vdW ferromagnet Fe3GaTe2, which has been shown to have magnetic order above room temperature and sizable perpendicular magnetic anisotropy, we investigate the basic electronic structure and magnetic properties of Fe3GaTe2 as well as tunneling magnetoresistance effect in magnetic tunnel junctions (MTJs) with structure of Fe3GaTe2/insulator/Fe3GaTe2 by using first-principles calculations. It is found that Fe3GaTe2 with highly spin-polarized Fermi surface ensures that such magnetic tunnel junctions may have prominent tunneling magnetoresistance effect at room temperature even comparable to existing conventional AlOx and MgO-based MTJs. Our results suggest that Fe3GaTe2-based MTJs may be the promising candidate for realizing long-waiting full magnetic vdW spintronic devices.