Back‐End‐of‐Line Compatible Low‐Temperature Furnace Anneal for Ferroelectric Hafnium Zirconium Oxide Formation
David Lehninger, Ricardo Olivo, Tarek Ali, Maximilian Lederer, Thomas Kämpfe, Clemens Mart, Kati Biedermann, Kati Kühnel, Lisa Roy, Mahsa Kalkani, Konrad Seidel
Abstract
Hafnium Zirconium Oxide Films So far, the ferroelectric phase of prior amorphous hafnium zirconium oxide (HZO) films is achieved by using rapid thermal annealing. In article number 1900840 by David Lehninger and co-workers, it is shown that a dedicated annealing step is not needed for the integration of ferroelectric HZO films into the back-end-of-line of integrated circuits. A furnace anneal given by the thermal budget during interconnect-formation is sufficient to functionalize even ultrathin 5 nm HZO films. This result will help to optimize the integration flow, which saves process time and fabrication costs.