Front and back channels coupling and transport on 28 nm FD-SOI MOSFETs down to liquid-He temperature
Bruna Cardoso Paz, M. Cassé, S. Haendler, A. Juge, Emmanuel Vincent, Philippe Galy, F. Arnaud, G. Ghibaudo, M. Vinet, S. De Franceschi, Tristan Meunier, F. Gaillard
Topics & Concepts
Silicon on insulatorTransistorMaterials scienceOptoelectronicsAtmospheric temperature rangeCoupling (piping)Channel (broadcasting)MOSFETElectron mobilityScatteringCondensed matter physicsRange (aeronautics)Electrical engineeringPhysicsOpticsVoltageQuantum mechanicsSiliconThermodynamicsEngineeringComposite materialMetallurgyAdvancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devicesSilicon Carbide Semiconductor Technologies