Photothermal and void effect of a semiconductor rotational medium based on Lord–Shulman theory
A. A. Kilany, S. M. Abo‐Dahab, A. M. Abd-Alla, Abo-el-nour N. Abd-alla, Aboelnour N. Abd-alla, Aboelnour N. Abd-alla
Abstract
In this article the photothermal and void parameters of a semiconductor rotational medium are investigated when there is a fixed thermal relaxation time. We obtain the displacement, temperature, stress components, and carrier density concentration in a thermoelastic solid. Considering the normal mode technique under the effectiveness of the rotation, photothermal, and voids on the obtained components were graphically drawn. A comparison was made between the results obtained, taking into account the presence or ignorance of rotation, photothermal, and voids. The outcomes point out a strong impact of the voids, rotation, photothermal, and the thermal relaxation on the phenomenon and agree with the physical results. The results agree with the previous results obtained by the others when the rotation and voids vanish.