Doping modulated ion hopping in tantalum oxide based resistive switching memory for linear and stable switching dynamics
Young‐Woong Song, Yun-Hee Chang, Jae-Ho Choi, Min‐Kyu Song, Jeong Hyun Yoon, Sein Lee, Se-Yeon Jung, Wooho Ham, Jeong-Min Park, Hyun‐Suk Kim, Jang‐Yeon Kwon
Topics & Concepts
Resistive random-access memoryArtificial neural networkMaterials scienceDopingNonlinear systemConductanceDopantComputer scienceOptoelectronicsResistive touchscreenNeuromorphic engineeringOxideTantalumSwitching timeNanotechnologyElectronic engineeringElectrical engineeringArtificial intelligencePhysicsCondensed matter physicsEngineeringVoltageMetallurgyComputer visionQuantum mechanicsAdvanced Memory and Neural ComputingElectronic and Structural Properties of OxidesFerroelectric and Negative Capacitance Devices