Interface-induced transition from Schottky-to-Ohmic contact in Sc<sub>2</sub>CO<sub>2</sub>-based multiferroic heterojunctions
Huamin Hu, Gang Ouyang
Abstract
In order to achieve a multiferroic heterojunction with a low resistance contact, we investigated a series of Sc2CO2-based van der Waals (vdW) multiferroic heterojunctions in which the ferromagnetics (1T-MnSe2, 1T-VSe2, and 1T-VTe2) were selected as the contact electrodes in terms of first-principles calculations. By reversing the polarization state of Sc2CO2 from Sc-P↑ to Sc-P↓, we found that the heterojunctions converted from Schottky-to-Ohmic contact. Moreover, this conversion, accompanied by an interface charge transfer is intrinsic and is not regulated by the interlayer spacing and biaxial strain. This work provides an avenue for the design of two-dimensional Sc2CO2-based multiferroic electronics in the future.
Topics & Concepts
Ohmic contactMultiferroicsHeterojunctionSchottky barrierMaterials sciencePolarization (electrochemistry)Condensed matter physicsSchottky diodeOptoelectronicsChemistryNanotechnologyFerroelectricityPhysicsPhysical chemistryDielectricDiodeLayer (electronics)2D Materials and ApplicationsMultiferroics and related materialsPerovskite Materials and Applications