Comparison Investigations on the Total Ionizing Dose Radiation of 4H-SiC MOS Structure Prepared With Different Nitrogen Annealing
Yibo Zhang, Xiao-Yan Tang, Hao Yuan, Yancong Liu, Jingkai Guo, Zhiwen Zhang, Yu Zhou, Fengyu Du, Keyu Liu, Haohang Yang, Qingwen Song, Yuming Zhang
Abstract
In this article, the effect of the different NO annealing time of 4H-SiC metal-oxide-semiconductor (MOS) capacitance and the n-type MOS field effect transistors (n-MOSFETs) for the total ionizing dose (TID) radiation are studied. We show that after 1250 °C 60 min NO annealing, the device balances between the channel mobility and radiation resistance. The mechanism of the effect of TID on the 4H-SiC gate oxide is studied. And the mechanism of the ledge effect for pMOS is clarified. Furthermore, the electrical characteristics of the n-MOSFET affected by TID are also discussed, showing that TID mainly affects the shift of threshold voltage and inconspicuously affects the channel mobility.