Favourable growth conditions for the preparation of bulk AlN single crystals by PVT
C. Hartmann, L. Matiwe, J. Wollweber, I. Gamov, K. Irmscher, Matthias Bickermann, Thomas L. Straubinger
Abstract
A high seed temperature (2251 °C) reveals the highest deep UV transparency (<italic>α</italic><sub>265nm</sub> = 27 cm<sup>−1</sup>), a high structural perfection (EPD = 9 × 10<sup>3</sup> cm<sup>−2</sup>) and a suitable growth rate (<italic>R</italic> = 200 μm h<sup>−1</sup>).
Topics & Concepts
CrystallographyMaterials scienceAnalytical Chemistry (journal)ChemistryChromatographyGaN-based semiconductor devices and materialsGa2O3 and related materialsAcoustic Wave Resonator Technologies