A 20–44-GHz Image-Rejection Receiver With >75-dB Image-Rejection Ratio in 22-nm CMOS FD-SOI for 5G Applications
Li Gao, Qian Ma, Gabriel M. Rebeiz
Abstract
This article presents a 20-44-GHz image-rejection receiver in GlobalFoundries 22-nm fully-depleted silicon-in-insulator (FD-SOI). The receiver includes a wideband LNA with a three-pole high-pass rejection filter coupled to a double-balanced mixer with a wideband LO driver and an intermediate frequency (IF) amplifier. At an IF of 16 GHz, the image band at dc -12 GHz is filtered by the LNA response and is greater than 75 dB over the entire 20-44-GHz range. The receiver results in a gain of 24-28.5 dB and a noise figure (NF) of 3.3-5 dB at 20-44 GHz and achieves an error vector magnitude (EVM) of 3.6%-3.7% at the carrier frequency of 28 and 39 GHz with 2-Gbaud symbol rate at 64-QAM waveform. To the best of the authors' knowledge, this is the first wideband image-rejection receiver that covers the entire millimeter-wave 5G band based on GF 22-nm CMOS FD-SOI.