Litcius/Paper detail

Asymmetric Metal–Carboxylate Complexes for Synthesis of InGaP Alloyed Quantum Dots with Blue Emission

Doheon Yoo, Min‐Jae Choi

2024ACS Nano15 citationsDOI

Abstract

Indium phosphide (InP) quantum dots (QDs) have attracted significant interest as next-generation light-emitting materials. However, the synthesis of blue-emitting InP-based QDs has lagged behind that of established green- and red-emitting InP QDs. Herein, we present a strategy to synthesize blue-emitting QDs by forming an InGaP alloy composition. The introduction of asymmetric In–carboxylate and Ga–carboxylate complexes resulted in a balanced synthetic reactivity between In–P and Ga–P, leading to the formation of InGaP alloyed QDs. The resultant In 1– x Ga x P alloyed QDs exhibited a broad range of photoluminescence (PL) tunability, spanning from 535 nm (InP) to 465 nm (In 0.62 Ga 0.38 P), depending on the In/Ga ratio used in the synthesis. In contrast, synthesis with symmetric In–carboxylate and Ga–carboxylate complexes produced a core/shell structure of InP/GaP QDs, which did not exhibit a blue shift of the PL peak with Ga addition. By employing a core/shell structure of In 0.62 Ga 0.38 P/ZnS QDs, we achieved a PL quantum yield of 42% at 475 nm. This work highlights the material-processing strategy essential for forming alloyed structures in III–V ternary systems.

Topics & Concepts

CarboxylateQuantum dotMaterials sciencePhotoluminescenceIndium phosphideTernary operationQuantum yieldIndiumPhosphideNanotechnologyOptoelectronicsMetalChemistryStereochemistryFluorescenceGallium arsenideOpticsProgramming languageMetallurgyPhysicsComputer scienceQuantum Dots Synthesis And PropertiesSemiconductor Quantum Structures and DevicesSemiconductor materials and devices