The More, the Better–Recent Advances in Construction of 2D Multi‐Heterostructures
Ruijie Zhang, Menghan Li, Lin Li, Zhongming Wei, Fei Jiao, Dechao Geng, Wenping Hu
Abstract
Abstract The past few years have witnessed significant development in the controlled growth of 2D heterostructures. Among those kinds of heterostructures, vertical and lateral ones have drawn the most attention. Vertical heterostructures can be created in the mode of layer by layer. The layer number and sequence in the vertical orientation can be modulated and thus leading to customized properties. However, the fabrication of lateral heterostructures has been met with challenges. The most concerning issue is related to the consistency at the atomic scale when two layers are stitched in a lateral direction. Adhering to the concept of epitaxial growth, chemical vapor deposition (CVD) has exerted significant impact in forming 2D lateral heterostructures. In this review, recent academic breakthroughs involving controlled growth of multi‐heterostructures by CVD are present. The CVD technique in terms of growth parameters, choice of catalysts, and mechanism is fully emphasized, offering guidelines for shaping novel 2D heterostructures. Several novel multi‐heterostructures attained by the CVD method are exhibited. Further, the properties and devices are described to demonstrate the unique features of multi‐heterostructures. The great advances in precisely constructing multi‐heterostructure are expected to push forward the way for 2D materials to industrialization and commercialization.