In-plane ferroelectricity in few-layered GeS and its van der Waals ferroelectric diodes
Yong Yan, Qunrui Deng, Shasha Li, Tao Guo, Xueping Li, Yurong Jiang, Xiaohui Song, Wen Huang, Juehan Yang, Congxin Xia
Abstract
, a switchable shift current can also be observed in the polarized GeS nanoflakes under light irradiation. To further enhance the photoresponsivity, few-layered InSe was transferred onto the GeS nanoflakes to form van der Waals ferroelectric diodes. The interfacial perturbation breaking the inversion symmetry results in the enhancement of robust dipoles in the GeS side along the interface, which can be tuned by the in-plane electric field. Overall, this work opens the door for exploring the low-dimensional ferroelectric memory and energy conversion applications based on 2D GeS nanoflakes and provides a deeper understanding of the photovoltaic mechanism with in-plane 2D ferroelectric diodes.