Effects of temperature and DC cycling stress on resistive switching mechanisms in hafnia-based ferroelectric tunnel junction
Wonjun Shin, Ryun‐Han Koo, Kyung Kyu Min, Been Kwak, Dongseok Kwon, Daewoong Kwon, Jong‐Ho Lee
Abstract
We propose an accurate and effective method, low-frequency noise (LFN) spectroscopy, to examine the resistive switching mechanism in ferroelectric tunnel junctions (FTJs) based on pure hafnium oxide (HfOx). Contrary to previous studies that primarily focused on the ferroelectric (FE) resistive switching (RS) in HfOx-based FTJs, the results of this study demonstrate that non-FE RS affected by the redistribution of oxygen vacancies also plays a significant role in determining the performance of FTJs. LFN spectroscopy is conducted in different conditions by changing the operating temperature and inducing DC cycling stress. The results reveal that the RS mechanism changes from FE to non-FE RS with increased program bias in all conditions. This change is facilitated by the rise in temperature and the number of DC cycling stress.