Phenylhydrazinium Iodide for Surface Passivation and Defects Suppression in Perovskite Solar Cells
Md Ashiqur Rahman Laskar, Wenqin Luo, Nabin Ghimire, Ashraful Haider Chowdhury, Behzad Bahrami, Ashim Gurung, Khan Mamun Reza, Rajesh Pathak, Raja Sekhar Bobba, Buddhi Sagar Lamsal, Ke Chen, Md Tawabur Rahman, Sheikh Ifatur Rahman, Khalid Emshadi, Tingting Xu, Mao Liang, Wen‐Hua Zhang, Qiquan Qiao
Abstract
Abstract In recent years, hybrid perovskite solar cells (HPSCs) have received considerable research attention due to their impressive photovoltaic performance and low‐temperature solution processing capability. However, there remain challenges related to defect passivation and enhancing the charge carrier dynamics of the perovskites, to further increase the power conversion efficiency of HPSCs. In this work, the use of a novel material, phenylhydrazinium iodide (PHAI), as an additive in MAPbI 3 perovskite for defect minimization and enhancement of the charge carrier dynamics of inverted HPSCs is reported. Incorporation of the PHAI in perovskite precursor solution facilitates controlled crystallization, higher carrier lifetime, as well as less recombination. In addition, PHAI additive treated HPSCs exhibit lower density of filled trap states (10 10 cm −2 ) in perovskite grain boundaries, higher charge carrier mobility (≈11 × 10 −4 cm 2 V −1 s), and enhanced power conversion efficiency (≈18%) that corresponds to a ≈20% improvement in comparison to the pristine devices.