Graphene/PtSe₂/Pyramid Si van Der Waals Schottky Junction for Room-Temperature Broadband Infrared Light Detection<sub/>

Abstract

Uncooled infrared (IR) photodetection has attracted increasing research interest due to its important applications in civil and military fields. Recently, platinum diselenide (PtSe <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ), a newly discovered group-10 two-dimensional (2D) noble metal dichalcogenide (NMD) member, has emerged as an attractive candidate for highly sensitive IR photodetection due to its layer-dependent bandgap transition from semiconductor to semimetal, wide optical absorption, and high carrier mobility. Here, we demonstrate the successful assembly of PtSe <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /pyramid Si mixed-dimensional van der Waals (vdW) Schottky junction with a graphene transparent electrode. Due to the novel vertical device structure with a graphene top contact, the photodetector achieves an appealing device performance, including an ultrabroadband response up to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10.6~\mu \text{m}$ </tex-math></inline-formula> , a high responsivity of 0.528 A/W, a large specific detectivity of ~1012 Jones, and a fast response time of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$8.2~\mu \text{s}$ </tex-math></inline-formula> at zero bias voltage. More importantly, these findings have enabled the realization of an excellent room-temperature long-wave IR (LWIR) imaging capability and its utilization as an optical receiver in optical IR communication. Our work demonstrates a reliable approach to the construction of a high-performance Schottky junction device for room-temperature broadband IR photodetection.

Topics & Concepts