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A 64Mpixel CMOS Image Sensor with 0.56μm Unit Pixels Separated by Front Deep-Trench Isolation

Sungbong Park, ChangKyu Lee, Sangcheon Park, Haeyong Park, Taeheon Lee, Dami Park, Minsung Heo, In‐Yong Park, Hyunyoung Yeo, Youna Lee, Juhee Lee, Beomsuk Lee, Dongchul Lee, Jin‐Young Kim, Bokwon Kim, Jinsun Pyo, Shi-Li Quan, Sungyong You, Inho Ro, Sungsoo Choi, Sung In Kim, In-Sung Joe, Jong‐Eun Park, Chang-Hyo Koo, Jae‐Ho Kim, Chong Kwang Chang, Taehee Kim, JinGyun Kim, Jamie Lee, Hyunchul Kim, Chang-Rok Moon, Hyoung-Sub Kim

20222022 IEEE International Solid- State Circuits Conference (ISSCC)21 citationsDOI

Abstract

CMOS image sensors (CISs) with deep-submicron pixels are now in high demand, as high-end mobile devices are equipped with multiple camera modules that are used for ultra-high-resolution imaging [1], [2]. The biggest challenges with small pixels are to maintain dynamic range (DR), signal-to-noise ratio (SNR), and sensitivity compatible with a sensor with larger pixels. A back-illuminated stacked sensor with front deep-trench isolation (FDTI) and shallow-trench isolation (STI) for inter-pixel and inter-node isolation respectively appears promising for continuous pixel-size reduction in terms of maximizing DR with large full-well capacity (FWC) while minimizing optical/electrical crosstalk [3]–[5]. However, dark current may increase by strong electric fields (e-field) near defective FDTI interfaces if more doping is applied to a small photodiode (PD) to increase FWC. In addition, the FDTI/STI structure limits the area of in-pixel transistor amplifiers, and it may deteriorate dark temporal noise (TN) as pixel pitch becomes smaller. Furthermore, optical crosstalk between different color filters (CFs) is more problematic as pixel size enters the sub-wavelength scale. In this work, a back-illuminated 64Mpixel CIS with <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$0.56\mu\mathrm{m}$</tex> -pitched pixels is reported. We present pixel designs and fabrication processes that achieve competitive FWC, dark current, TN, and optical performances with small pixels.

Topics & Concepts

PixelDark currentPhotodiodeImage sensorShallow trench isolationCMOSPhysicsOptoelectronicsOpticsMaterials sciencePhotodetectorTrenchNanotechnologyLayer (electronics)CCD and CMOS Imaging SensorsAdvanced Memory and Neural ComputingAdvancements in Semiconductor Devices and Circuit Design
A 64Mpixel CMOS Image Sensor with 0.56μm Unit Pixels Separated by Front Deep-Trench Isolation | Litcius