Hot-Electron-Induced Punch-Through (HEIP) Effect in p-MOSFET Enhanced by Mechanical Stress
Kookjin Lee, B. Kaczer, Anastasiia Kruv, Mario González, R. Degraeve, Stanislav Tyaginov, Alexander Grill, Ingrid De Wolf
Abstract
Hot-carrier-induced degradation of short p-channel field-effect transistors in the presence of externally applied vertical mechanical force is investigated. The mechanical stress was induced in the devices by applying a normal load with a nanoindenter. Using finite element modeling, the induced stress to the channel was estimated to reach GPa range. It is shown that compressive mechanical stress considerably enhances the impact ionization rate and the generation of secondary electron-hole pairs. These can be trapped in the gate oxide and cause a hot-electron-induced punch-through effect and effective p-channel length reduction even after both mechanical and electrical stresses are removed. The presented findings indicate the importance of mechanical stress control and engineering for improving the device reliability.