Roadmap for Ferroelectric Domain Wall Nanoelectronics
Pankaj Sharma, T. S. Moise, Luigi Colombo, Jan Seidel
Abstract
Abstract Ferroelectric domain walls naturally form at nanoscale interfaces of polar order leading to electronic properties distinct from the bulk that can also be electrically programmed. These nanoscale features currently are being actively explored for the development of agile, low‐energy electronics for applications in memory, logic, and brain‐inspired neuromorphic computing. In this article, the authors review the state of the art, the latest developments, and outline key device and material challenges, emerging opportunities, and new directions for the accelerated engineering and commercialization of domain wall technology.
Topics & Concepts
Neuromorphic engineeringMaterials scienceNanoelectronicsNanotechnologyFerroelectricityDomain (mathematical analysis)Agile software developmentNanoscopic scaleCommercializationElectronicsEngineering physicsComputer scienceElectrical engineeringOptoelectronicsEngineeringArtificial intelligenceMathematicsArtificial neural networkLawMathematical analysisSoftware engineeringPolitical scienceDielectricFerroelectric and Piezoelectric MaterialsFerroelectric and Negative Capacitance DevicesElectronic and Structural Properties of Oxides