Large inverted band gap in strained three-layer InAs/GaInSb quantum wells
C. Avogadri, S. Gebert, S. S. Krishtopenko, Isaac Pérez Castillo, C. Conséjo, S. Ruffenach, Christophe Roblin, C. Bray, Y. Krupko, Sandrine Juillaguet, Sylvie Contreras, A. Wolf, Fabian Hartmann, Sven Höfling, G. Boissier, Jean‐Baptiste Rodriguez, Sébastien Nanot, E. Tournié, F. Teppe, B. Jouault
Abstract
InAs/GaInSb quantum wells with three strained layers are theoretically two-dimensional quantum spin Hall insulators. Magnetotransport measurements reveal that these structures have indeed inverted band gaps as large as 45 meV and, moreover, have an edge conduction of possible topological origin.
Topics & Concepts
Condensed matter physicsQuantum wellTopological insulatorConduction bandBand gapPhysicsMaterials scienceEnhanced Data Rates for GSM EvolutionLayer (electronics)ElectronQuantum mechanicsNanotechnologyTelecommunicationsLaserComputer scienceTopological Materials and PhenomenaElectronic and Structural Properties of OxidesQuantum and electron transport phenomena