Engineering of Chemical Vapor Deposition Graphene Layers: Growth, Characterization, and Properties
Wenqian Yao, Hongtao Liu, Jianzhe Sun, Bin Wu, Yunqi Liu
Abstract
Abstract Numerous studies conducted on the layered graphene family—including the monolayer, bilayer, trilayer, few‐layer, and multilayer—draw plenty of attention to stacking modes and twist angles, which are extensively explored for its controlled growth, properties, and applications. This review provides a comprehensive overview of current challenges and opportunities for the chemical vapor deposition (CVD) growth, characterization, and electrical properties of graphene depending on the layer number and twist angles. Various state‐of‐the‐art innovations using the CVD method, which incorporates graphene synthesis through the control of metal substrates, layer numbers, and twist angles, are presented. The underlying growth mechanisms are discussed in terms of the interactions among graphene substrates/layers and its dynamic process. The characterization methods for determining the layer number and twist angle of graphene layers are summarized. Furthermore, the electrical properties and applications of graphene, particularly magic‐angle twist bilayer graphene, are briefly introduced. Finally, outlooks and perspectives for the engineering of CVD graphene layers are discussed.