Strain relaxation and dislocation annihilation in compositionally graded α-(AlxGa1-x)2O3 layer for high voltage α-Ga2O3 power devices
Byung‐Soo Kim, Duyoung Yang, Woonbae Sohn, Seungmin Lee, Hwan-Hee-Chan Choi, Taehoon Jang, Euijoon Yoon, Yongjo Park, Ho Won Jang
Topics & Concepts
Materials scienceDislocationEpitaxySapphireOptoelectronicsTransmission electron microscopyCrystallographyLayer (electronics)Condensed matter physicsComposite materialOpticsNanotechnologyChemistryLaserPhysicsGa2O3 and related materialsZnO doping and propertiesAdvanced Photocatalysis Techniques