Tunable voltage polarity-dependent resistive switching characteristics by interface energy barrier modulation in ceria-based bilayer memristors for neuromorphic computing
S.T. Moon, Kitae Park, Peter Hayoung Chung, Dwipak Prasad Sahu, Tae‐Sik Yoon
Topics & Concepts
Neuromorphic engineeringMemristorMaterials scienceStackingSynaptic weightLong-term potentiationOptoelectronicsBilayerVoltageElectronic engineeringComputer scienceChemistryElectrical engineeringPhysicsArtificial neural networkNuclear magnetic resonanceBiochemistryMachine learningReceptorMembraneEngineeringAdvanced Memory and Neural ComputingNeuroscience and Neural EngineeringPhotoreceptor and optogenetics research