Simulation of Single-Event Transient Effect for GaN High-Electron-Mobility Transistor
Zhiheng Wang, Yanrong Cao, Xin‐Xiang Zhang, Chuan Chen, Linshan Wu, Maodan Ma, Hanghang Lv, Ling Lv, Xuefeng Zheng, Wenchao Tian, Xiaohua Ma, Yue Hao
Abstract
A GaN high-electron-mobility transistor (HEMT) was simulated using the semiconductor simulation software Silvaco TCAD in this paper. By constructing a two-dimensional structure of GaN HEMT, combined with key models such as carrier mobility, the effects of a different state, different incidence position, different drain voltage, different LET values, and a different incidence angle on the single-event transient effect of GaN HEMT are simulated. LET stands for the linear energy transfer capacity of a particle, which refers to the amount of energy transferred by the particle to the irradiated substance on the unit path. The simulation results show that for GaN HEMTs, the single-event transient effect is more obvious when the device is in off-state than in on-state. The most sensitive location of GaN HEMTs to the single-event effect is in the region near the drain. The peak transient current increases with the increase in the drain bias and incident ion LET values. The drain charge collection time increases with the angle of incidence of heavy ion.