Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates
Chong-Rong Huang, Hsien‐Chin Chiu, Chia‐Hao Liu, Hsiang-Chun Wang, Hsuan‐Ling Kao, Chih-Tien Chen, Kuo-Jen Chang
Abstract
In this study, an AlGaN/GaN high-electron-mobility transistor (HEMT) was grown through metal organic chemical vapor deposition on a Qromis Substrate Technology (QST). The GaN on the QST device exhibited a superior heat dissipation performance to the GaN on a Si device because of the higher thermal conductivity of the QST substrate. Thermal imaging analysis indicated that the temperature variation of the GaN on the QST device was 4.5 °C and that of the GaN on the Si device was 9.2 °C at a drain-to-source current (IDS) of 300 mA/mm following 50 s of operation. Compared with the GaN HEMT on the Si device, the GaN on the QST device exhibited a lower IDS degradation at high temperatures (17.5% at 400 K). The QST substrate is suitable for employment in different temperature environments because of its high thermal stability.