Recent advances in resistive switching memory devices based on diverse material platforms for next generation electronics
Wonseop Shin, Sungho Jang, Hyojung Kim
Abstract
The fast evolution of information technology has significantly increased the demand for high-performance electronic devices, yet silicon-based hardware still faces fundamental challenges in fulfilling these requirements. Consequently, various alternatives, including metal oxides, biomaterials, and 2D materials, have received considerable attention. Notably, resistive switching memory (RS memory) stands out due to its low power consumption and quick switching capability, and it presents promising prospects for emerging data storage. This article thoroughly explores the essential substances and mechanisms that support RS memory, carefully examining the features and transition processes of multiple candidates, such as halide perovskites (HPs), metal oxides, polymers, biomaterials, and 2D structures. In addition, it clarifies the fundamental operation of ECM (electrochemical metallization) and VCM (valence change mechanism) based resistive-switching random-access memory (RRAM) devices, thoroughly comparing their benefits and possible drawbacks. This investigation highlights the promise of RS memory and identifies key materials and processes ready to promote further progress in upcoming electronic innovations and memory solutions for next-generation systems.