Millimeter-Wave Amplifier-Based Noise Sources in SiGe BiCMOS Technology
Henrik Forstén, Jan Saijets, Mikko Kantanen, Mikko Varonen, Mehmet Kaynak, P. Piironen
Abstract
This article describes the development and characterization of wideband millimeter-wave noise sources based on SiGe BiCMOS amplifiers. Two single-ended three-stage amplifier-based noise sources reached excess noise ratio (ENR) values over 20 dB from 120 to 220 GHz with 20 mA of the bias current from a 2.3-V supply. We also introduce a novel switchable noise source employing the Lange coupler for providing wideband matching in both ON and OFF configurations of the noise source. The Lange coupler-based noise source has better than 12-dB matching from 90 to 270 GHz with an ENR of better than 15 dB from 125 to 235 GHz.
Topics & Concepts
WidebandBiCMOSLow-noise amplifierAmplifierNoise figureNoise (video)Electrical engineeringElectronic engineeringEffective input noise temperatureNoise temperatureExtremely high frequencyY-factorNoise measurementPhysicsEngineeringComputer scienceTelecommunicationsPhase noiseTransistorAcousticsCMOSNoise reductionVoltageImage (mathematics)Artificial intelligenceRadio Frequency Integrated Circuit DesignElectromagnetic Compatibility and Noise SuppressionMicrowave Engineering and Waveguides