Light-Emitting Transistors with High Color Purity Using Perovskite Quantum Dot Emitters
Yu Jung Park, Minseong Kim, Aeran Song, Jin Young Kim, Kwun‐Bum Chung, Bright Walker, Jung Hwa Seo, Dong Hwan Wang
Abstract
The class of organic–inorganic lead halides with perovskite crystal structures has recently emerged as promising materials for a variety of practical optoelectronic applications. In particular, hybrid halide perovskite quantum dots possess excellent intrinsic optoelectronic properties such as high color purity (full width at half-maximum of 24.59 nm) and photoluminescence quantum yields (92.7%). In this work, we demonstrate the use of perovskite quantum dot materials as an emissive layer of hybrid light-emitting transistors. To investigate the working mechanism of perovskite quantum dots in light-emitting transistors, we investigated the electrical and optical characteristics under both p-channel and n-channel operation. Using these materials, we have achieved perovskite quantum dot light-emitting transistors with high electron mobilities of up to 12.06 cm2·V–1 s–1, high brightness of up to 1.41 × 104 cd m–2, and enhanced external quantum efficiencies of up to 1.79% operating at a source–drain potential of 40 V.