Engineering the optical properties of nickel sulphide thin films by zinc integration for photovoltaic applications
Junaid Younus, Warda Shahzad, Bushra Ismail, Tanzeela Fazal, Mazloom Shah, Shahid Iqbal, Ahmed Hussain Jawhari, Nasser S. Awwad, Hala A. Ibrahium
Abstract
) ranges between 0.01 and 0.13, and bandgap values between 2.25 and 2.54 eV. Overall findings indicated that doping is a useful method for modifying the composition, and therefore, the structural and morphological characteristics of NiS thin films, to enhance their optoelectronic behavior.
Topics & Concepts
Thin filmMaterials scienceNickelDopantTernary operationZincPhotovoltaicsBand gapChemical bath depositionDopingRefractive indexDeposition (geology)Molar absorptivityPhotovoltaic systemOptoelectronicsChemical engineeringAnalytical Chemistry (journal)MetallurgyNanotechnologyOpticsChemistryOrganic chemistryComputer sciencePhysicsEcologySedimentBiologyEngineeringProgramming languagePaleontologyChalcogenide Semiconductor Thin FilmsQuantum Dots Synthesis And PropertiesCopper-based nanomaterials and applications