High-Gain Quasi-Switched Boost Inverter With Single Inductor and Continuous Input Current
Yuanmao Ye, Shibo Xu, Shaojun Chen, Xiaolin Wang, Lingling Cao
Abstract
The unique advantages of impedance source inverters make them more suitable for new energy fields that need to boost and invert low dc voltages. In order to enhance the boost capability, this work derives a new high-gain quasi-switched boost inverter (HG-qSBI) from the original qSBI topology. Specifically, the voltage gain is improved from 1/(1-2 <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">d</i> ) to 1/(1-3 <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">d</i> ) by adding one switched-capacitor unit formed by one capacitor, one transistor, and two diodes, here <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">d</i> is the duty ratio for shoot-through states of the inverter. It inherits the advantages of single inductor and continuous input current, and the modulation strategy is exactly the same as the original qSBI. Moreover, all components employed in the HG-qSBI withstand the same voltage stress. All these features are verified by both three-phase simulation and single-phase experimental results.