Rational high-entropy doping strategy via modular <i>in situ</i> /post solvothermal doping integration for microwave absorption
Yuefeng Yan, Ziyan Cheng, Tao Chen, En Zhou, Boshi Gao, Guangyu Qin, Guansheng Ma, Xiaoxiao Huang
Abstract
Doping strategies have been widely demonstrated as an effective approach to tailor microwave absorption properties in various material systems. However, achieving high-entropy doping (HED) in MoS<sub>2</sub> while minimizing phase ratio interference, effectively integrating multiple transition metal elements substitution, and elucidating the underlying absorption mechanisms remains a significant challenge. In this work, we develop a modular in-situ/post-solvothermal doping process to realize the cooperative incorporation of multiple dopants into the 1T-MoS₂ host. For the first time, we systematically investigate the effects of multi-element co-doping, including high density lattice strain, crystalline defects, localized charge accumulation and redistribution, which significantly enhance dipole polarization loss. Benefiting from the balanced impedance characteristics and coordinated polarization/conductive losses enabled by HED engineering, the WVNbTaRu-MoS<sub>2</sub> sample achieves a broadband effective absorption bandwidth of 7.65 GHz, which is more than double that of undoped counterparts. Through combinatorial screening, we proposed 31 feasible doping configurations and experimentally validate 9 variants, establishing a foundational framework for designing advanced MoS<sub>2</sub> based absorbers with tailored electromagnetic properties. This study provides innovative insights and pathways for rational design of high performance transition metal dichalcogenide based microwave absorbers.