Two-dimensional InSb/GaAs- and InSb/InP-based tandem photovoltaic device with matched bandgap
Meiqiu Xie, Xuhai Liu, Yang Li, Xing’ao Li
Abstract
of InSb, InSb/GaAs- and InSb/InP-based tandem PVs are constructed. In addition, the complementary absorption spectra of these two subcells can facilitate the achievement of high tandem power conversion efficiency. Furthermore, we have analyzed in detail the influencing factors for PCE and the physical mechanism of the optimized match between the top and bottom subcells in the tandem configurations. Our designed 2D-semiconductor-based PVs can be expected to bring a new perspective for future commercialized high-efficiency energy devices.
Topics & Concepts
TandemOptoelectronicsMaterials scienceBand gapSemiconductorPhotovoltaicsPhotovoltaic systemEnergy conversion efficiencyEngineering physicsAbsorption (acoustics)NanotechnologyElectrical engineeringPhysicsEngineeringComposite materialSemiconductor Quantum Structures and DevicesNanowire Synthesis and ApplicationsPerovskite Materials and Applications