Sm-doped PZT thin film with high piezoelectric properties by sol-gel method
Jinming Ti, Junhong Li, Qingqing Fan, Qing Yu, Yuhan Ren, Chenghao Wang
Abstract
In this study, Pb(Zr0.54Ti0.46)O3 films were prepared by the sol-gel method with Sm doping concentrations of 0, 0.5, 1, 1.5, 2, and 3 mol. %. Their surface morphology, density, crystal structure, piezoelectric, dielectric, and ferroelectric properties were characterized. The results indicated that, unlike Sm-doped lead zirconate titanate (PZT) ceramics, all Sm-PZT films exhibit a significant increase in the grain size compared to undoped PZT films. Moreover, Sm doping affected their crystal orientation and significantly enhanced their piezoelectric coefficient d33 and remnant polarization (Pr). Notably, the Sm-PZT film with a doping concentration of 1.5 mol. % exhibited optimal (100) orientation, achieving a high piezoelectric coefficient d33 of 279.87 pm/V, 4.55 times that of the non-doped PZT films.